ガス検知センサー

Detection Range: 400 - 5000ppm (expandable to 40000ppm)

Detection Accuracy: ±(50ppm + 5% of the reading)

Technical Principle: Metal Oxide Semiconductor (MOX)

Detection Objects: CO, NO₂, NH₃ (optional)

Detection Principle: NDIR

Detected Gases: SiF4, CF4, SF6, NF3, CO2

Detection Principle: Ultrasonic measurement principle

Response Time: O₂ concentration: ≤1.5s

Detection Range: PM2.5: 0 - 1000μg/m³

Detection Accuracy: ±15% of the reading or ±15μg/m³ (-20°C - 60°C, calibrated against TSI8530)

Test Gas: Oxygen (O₂)

Detection Principle: Tunable Diode Laser Absorption Spectroscopy (TDLAS)

Detection Principle: Ultrasonic measurement principle

Detection Range: O₂ concentration: 0 - 100%, Flow rate: TBD

Heater Resistance: 3.2Ω ± 0.8Ω

Operating Voltage: 6V - 8V

Heater Resistance: 3.2Ω ± 0.8Ω

System Voltage: 10.8V - 16.5V

Detection Principle: Non - Dispersive Infrared (NDIR) Detection Technology

Tested Gas: Electrolyte Vapor DMC

Detection Principle: Ultrasonic measurement principle

Detection Range: Oxygen concentration: 0 - 100%，Flow rate: 0 - 240L/min

Response Time: Concentration: ≤1.5s; Flow rate: ≤0.3s

Operating Conditions: -5 °C - 50 °C, 0 - 95%RH (non - condensing)

1: 2

Measurement Index: Opacity N: (0 - 99.99)%, Light Absorption Coefficient K: (0 - 16) m⁻¹

Detection Principle: Thermal Conductivity Technology (TC)

Detection Type: H₂

Interface Mode: URAT_TTL

Dimensions (mm): 128.7*42.8*55.2

Measurement Index/Range: Opacity N: (0 - 99.99)%, Light Absorption Coefficient K: (0 - 16) m⁻¹

Resolution: N: 0.1%, K: 0.01 m⁻¹