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KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C

KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C

Digital MEMS gyro chip SPI I2C

MEMS gyro sensor ±400°/s

Fluid level meter gyro chip

Place of Origin:

CHINA

ブランド名:

KACISE

証明:

CE

Model Number:

KSGYR111M-S

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製品詳細
Supply voltage VDDM:
+2.7V~+3.6V
Bias ZRL:
±1°/s (0 LSB Typ)
Rate range I:
±400°/s
Non-linearity NI:
±0.5%FS
Cross-axis sensitivity CS:
±5%
ハイライト:

Digital MEMS gyro chip SPI I2C

,

MEMS gyro sensor ±400°/s

,

Fluid level meter gyro chip

支払いと送料の条件
Minimum Order Quantity
1PCS
Packaging Details
each unit has individual box and all boxes are packed in standard packages or customers requests available
Delivery Time
5-8work days
Supply Ability
1000 Piece/Pieces per Week negotiable
製品説明
KSGYR111M-S Digital Quartz MEMS GYRO Chip
Key Attributes
Attribute Value
Supply voltage VDDM +2.7V~+3.6V
Bias ZRL ±1°/s (0 LSB Typ)
Rate range I ±400°/s
Non-linearity NI ±0.5%FS
Cross-axis sensitivity CS ±5%
Product Overview

The KSGYR111M-S Digital Quartz MEMS GYRO Chip features superior bias output stability and low noise. This digital quartz gyroscope is based on quartz MEMS technology and manufactured using semiconductor processing techniques.

Key Features
  • Excellent bias temperature coefficient 0.0016 (°/s)/°C Typ
  • Low angle random walk 0.065 °/√h Typ
  • Integrated user-selectable digital filter and detuning frequency
  • SPI or I2C serial interface
  • Angular rate output (16 bits or 24 bits resolution)
  • Operating temperature -20°C to +80°C
  • Embedded temperature sensor
  • Low current consumption 900 μA Typ
Applications
  • Anti-vibration and attitude control for industrial applications
  • Motion detection for human machine interface
  • Wearable devices
  • Medical motion detection equipment
  • Optical, photography and platform stabilization
  • Inertial measurement instruments
KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C 0
Technical Specifications
Power Supply Parameters
Supply voltage VDDM +2.7V~+3.6V
Supply voltage for interface VDDI +1.65V~+3.6V
Product Performance
Scale factor So 70 LSB/(°/s) ±2% 16 bits, Ta=+25℃
17920 LSB/(°/s) ±2% 24 bits, Ta=+25℃
Scale factor variation over temperature Spt ±3% VDDM=3V, Ta=+25℃ reference
Bias ZRL ±1°/s (0 LSB Typ) Ta=+25℃
Bias variation over temperature A ZRLta ±0.25°/h -10℃~+50℃, Ta=+25℃ reference
Bias variation over temperature B ZRLtb ±1°/h -20℃~+80℃, Ta=+25℃ reference
Bias temperature coefficient ZRLs 0.0016(°/s)/℃ (Typ) VDDM = 3V, Average of absolute value, ΔT=1℃
Rate range I ±400°/s
Non-linearity NI ±0.5%FS Ta=+25℃
Cross-axis sensitivity CS ±5% Ta=+25℃
Current consumption Iop1 900μA Typ
Sleep current Iop3 3μA Typ
Noise density Nd 0.0015 (°/s)/√Hz @ 10Hz, LPF default setting
Angle random walk N 0.065 °/√h
Environmental Specifications
Operating temperature TOPR -20℃~+80℃
Storage temperature TSTG -40℃~+85℃
Dimensions

Unit: mm

KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C 1

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